t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 1 of 7 2n3700ub available on commercial versions l ow p ower npn s ilicon t ransistor qualified per mil - prf - 19500/391 qualified levels : jan, jan tx , jantxv , and jans description this 2n3700ub npn c eramic surface mount device is military qualified for high - reliability applications. ub package also available in : to - 18 (to - 206aa) (leaded) 2 n3700 to - 39 (to - 20 5ad) (leaded) 2 n3 019 to -5 package (leaded) 2n3019s to - 46 (to - 206ab) (leaded) 2 n3057a important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent to jedec registered 2n3 700 number . ? jan, jantx, jantxv and jans qualification s are available per mil - prf - 19500/391. ? r ad hard levels are also available per mil - prf - 19500/391. ( see rha datasheet for jans_2n3700ub .) ? rohs compliant versions available (commercial grade only) . applications / benefits ? ceramic ub surface mount package . ? lightweight. ? low power. ? military and other high - reliability applications. maximum ratings @ t a = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, irel and tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage te mp erature t j and t stg - 65 to +200 o c thermal impedance junction - to - ambient r ? ja 325 o c /w thermal impedance junction - to - solder pad r ? jsp 90 o c /w collector - emitter voltage v ceo 80 v collector - base voltage v cbo 140 v emitter - base voltage v ebo 7.0 v co llector current i c 1.0 a total power dissipation: @ t a = +25 o c (1) p d 0.5 w notes : 1. derate linearly 6.6 mw/c for t a +25 c . downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 2 of 7 2n3700ub mechanical and packaging ? case: ceramic . ? terminals: gold p lating over n ickel under plate (hot solder dip optional for military) . ? marking: part number, date code, manufacturers id. ? tape & reel option: standard per eia -4 81 d . consult factory for quantities. ? weight: < 0.04 g rams . ? see package dimensions on last page. part no menclature jan 2n3700 ub (e4) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characteristics table) rohs compliance e4 = rohs c ompliant ( gold plating without solder dip option ) blank = non - rohs c ompliant surface mount package symbols & definitions symbol definition f f requency i b base current (dc) i e emitter current (dc) t a ambient temp erature t c case temperature t sp solder pad temperature v cb collector to base voltage (dc) v ce collector to emitter voltage (dc) v eb emitter to base voltage (dc) downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 3 of 7 2n3700ub electrical characteristics @ t a = +25 c, unless otherwise noted parameters / tes t conditions symbol min. max. unit off character istics collector - emitter breakdown voltage i c = 30 ma v (br)ceo 80 v collector - base cutoff current v cb = 140 v i cbo 10 a emitter - base cutoff current v eb = 7 v i ebo1 10 a collector - emitter cutoff current v ce = 90 v i ces 10 na emitter - base cutoff current v eb = 5.0 v i ebo2 10 na on character is tics forward - current transfer ratio i c = 150 ma, v ce = 10 v i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1.0 a, v ce = 10 v h fe 100 50 90 50 15 300 300 300 collector - emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v ce(sat) 0.2 0.5 v base - emitter saturation voltage v be(sat) 1.1 v i c = 150 ma, i b = 15 ma dynamic characteristics parameters / test conditions symbol min. max. unit small - signal short - circuit forward current transfer ratio i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz h fe 80 400 magnitude of small - signal short - circuit forward current transfer ratio i c = 50 ma, v ce = 10 v , f = 20 mhz |h fe | 5.0 20 output capacitance v cb = 10 v, i e = 0, 100 k hz f 1.0 mhz c obo 12 pf input capacitance v eb = 0.5 v, i c = 0, 100 khz f 1.0 mhz c ibo 60 pf downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 4 of 7 2n3700ub electrical characteristics @ t a = +25 c unless otherwise noted (continued) safe operation area (see soa graph below and mil - std - 750, method 3053 ) dc tests t c = 25 c, 1 cycle, t = 10 ms test 1 2n3700ub v ce = 10 v i c = 180 ma test 2 2n3700ub v ce = 40 v i c = 45 ma test 3 2n3700ub v ce = 80 v i c = 22.5 ma (1) pulse test: pulse width = 300 s, d uty c ycle 2.0% . v ce C collector C emitter voltage C v maximum safe operating area @ t a = 25 oc see additional soa graph on next page. i c C collector current - a downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 5 of 7 2n3700ub electrical characteristics @ t a = +25 c unless otherwise noted (continued) v ce C collector C emitte r voltage C v maximum safe operating area (t sp = 25c ) i c C collector current - a downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 6 of 7 2n3700ub graphs t a ( o c) ambient figure 1 temperature - power derating (r ? ja ) t sp ( o c) solder pad figure 2 temperature - power derating (r ? jsp ) maximum dc operation rating (w) maximum dc operation rating (w) downloaded from: http:///
t4 - lds - 0185 - 3, rev . 1 ( 4 /24/13 ) ?201 3 microsemi corporation page 7 of 7 2n3700ub package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh 0 .046 0 .056 1.17 1.42 ls 1 0 .035 0 .039 0.89 0.99 bl 0 .115 0 .128 2.92 3.25 ls 2 0 .071 0 .079 1.80 2.01 bw 0 .085 0 .108 2.16 2.74 lw 0 .016 0. 024 0.41 0.61 cl - 0 .128 - 3.25 r - 0 .008 - 0.20 cw - 0 .108 - 2.74 r 1 - 0 .012 - 0.31 ll 1 0 .022 0 .038 0.56 0.96 r 2 - .022 - 0.56 ll 2 0 .017 0 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general inform ation only. 3. hatched areas on package denote metallized areas. 4. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. lid downloaded from: http:///
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